PSMN3R7-100BSEJ 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN3R7-100BSEJ
- Power Dissipation (Pd): 405W
- Total Gate Charge (Qg@Vgs): 246nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 16370pF@50V
- Continuous Drain Current (Id): 120A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.95mΩ@25A,10V
- Package: TO-263
- Manufacturer: Nexperia
