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PSMN5R8-40YS,115 Datasheet
Datasheet specifications
| Datasheet's name | PSMN5R8-40YS,115 |
|---|---|
| File size | 56.458 KB |
| File type | |
| Number of pages | 15 |
Download Datasheet PSMN5R8-40YS,115 |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN5R8-40YS,115
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 89W
- Total Gate Charge (Qg@Vgs): 28.8nC@10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 1703pF@20V
- Continuous Drain Current (Id): 90A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.7mΩ@15A,10V
- Package: SOT-669
- Manufacturer: Nexperia
