PSMN4R1-30YLC,115 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN4R1-30YLC,115
- Power Dissipation (Pd): 67W
- Total Gate Charge (Qg@Vgs): 23nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 1502pF@15V
- Continuous Drain Current (Id): 92A
- Gate Threshold Voltage (Vgs(th)@Id): 1.95V@1mA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.35mΩ@20A,10V
- Package: SOT-669
- Manufacturer: Nexperia
