A2T 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: GOFORD A2T
- Power Dissipation (Pd): 1.25W
- Continuous Drain Current (Id): 5.2A
- Gate Threshold Voltage (Vgs(th)@Id): 0.7V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ
- Package: SOT-23
- Manufacturer: GOFORD
