دیتاشیت SIHP30N60E-GE3
مشخصات دیتاشیت
| نام دیتاشیت |
SIHP30N60E-GE3
|
| حجم فایل |
90.752
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Vishay Intertech SIHP30N60E-GE3
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
250W
-
Total Gate Charge (Qg@Vgs):
130nC@10V
-
Input Capacitance (Ciss@Vds):
2600pF@100V
-
Continuous Drain Current (Id):
29A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
125mΩ@15A,10V
-
Package:
TO-220
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Manufacturer:
Vishay Intertech
