دیتاشیت IPD70N12S3-11
مشخصات دیتاشیت
| نام دیتاشیت |
IPD70N12S3-11
|
| حجم فایل |
62.059
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Infineon Technologies IPD70N12S3-11
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Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
125W
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Total Gate Charge (Qg@Vgs):
65nC@10V
-
Drain Source Voltage (Vdss):
120V
-
Input Capacitance (Ciss@Vds):
4355pF@25V
-
Continuous Drain Current (Id):
70A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@83uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
11.1mΩ@70A,10V
-
Package:
TO-252
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Manufacturer:
Infineon Technologies
