SISA10DN-T1-GE3 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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SISA10DN-T1-GE3
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حجم فایل
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103.423
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Vishay Intertech SISA10DN-T1-GE3
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
3.6W;39W
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Total Gate Charge (Qg@Vgs):
51nC@10V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
2425pF@15V
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Continuous Drain Current (Id):
30A
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Gate Threshold Voltage (Vgs(th)@Id):
2.2V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
3.7mΩ@10A,10V
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Package:
PowerPAK1212-8
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Manufacturer:
Vishay Intertech
