BSB165N15NZ3 G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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BSB165N15NZ3 G
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حجم فایل
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31.242
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies BSB165N15NZ3 G
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Operating Temperature:
-40°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.8W;78W
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Total Gate Charge (Qg@Vgs):
35nC@10V
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Drain Source Voltage (Vdss):
150V
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Input Capacitance (Ciss@Vds):
2800pF@75V
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Continuous Drain Current (Id):
9A;45A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@110uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
16.5mΩ@30A,10V
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Package:
MG-DSON-2(4.9x6.3)mm
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Manufacturer:
Infineon Technologies
