دیتاشیت TK72E12N1,S1X
مشخصات دیتاشیت
| نام دیتاشیت |
TK72E12N1,S1X
|
| حجم فایل |
74.951
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
TOSHIBA TK72E12N1,S1X
-
Power Dissipation (Pd):
255W
-
Total Gate Charge (Qg@Vgs):
130nC@10V
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Drain Source Voltage (Vdss):
120V
-
Input Capacitance (Ciss@Vds):
8100pF@60V
-
Continuous Drain Current (Id):
72A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@1mA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
4.4mΩ@36A,10V
-
Package:
TO-220
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Manufacturer:
TOSHIBA
