دیتاشیت PSMN6R1-30YLDX
مشخصات دیتاشیت
| نام دیتاشیت |
PSMN6R1-30YLDX
|
| حجم فایل |
77.837
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Nexperia PSMN6R1-30YLDX
-
Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
47W
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Total Gate Charge (Qg@Vgs):
13.6nC@10V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
817pF@15V
-
Continuous Drain Current (Id):
66A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.2V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
6mΩ@15A,10V
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Package:
SOT-669
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Manufacturer:
Nexperia
