IXFH60N65X2 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Littelfuse/IXYS IXFH60N65X2
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 780W
- Total Gate Charge (Qg@Vgs): 107nC@10V
- Drain Source Voltage (Vdss): 650V
- Input Capacitance (Ciss@Vds): 6180pF@25V
- Continuous Drain Current (Id): 60A
- Gate Threshold Voltage (Vgs(th)@Id): 5.5V@4mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 52mΩ@10V,30A
- Package: TO-247
- Manufacturer: IXYS