دیتاشیت 3DD13005ED-262
مشخصات دیتاشیت
نام دیتاشیت |
3DD13005ED-262
|
حجم فایل |
60.341
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
13
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jilin Sino-Microelectronics 3DD13005ED-262
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
4A
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Power Dissipation (Pd):
75W
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Transition Frequency (fT):
4MHz
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DC Current Gain (hFE@Ic,Vce):
20@500mA,10V
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Collector Cut-Off Current (Icbo):
100uA
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Collector-Emitter Breakdown Voltage (Vceo):
400V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1V@2A,400mA
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Package:
TO-262
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Manufacturer:
Jilin Sino-Microelectronics