3DD13005ED-262 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Jilin Sino-Microelectronics 3DD13005ED-262
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 4A
- Power Dissipation (Pd): 75W
- Transition Frequency (fT): 4MHz
- DC Current Gain (hFE@Ic,Vce): 20@500mA,10V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@2A,400mA
- Package: TO-262
- Manufacturer: Jilin Sino-Microelectronics
