BC847CLT1G Datasheet

BC848BLT1G

Datasheet specifications

Datasheet's name BC848BLT1G
File size 78.354 KB
File type pdf
Number of pages 13

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi BC847CLT1G
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 225mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 420@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@100mA,5mA
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi

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