SMBTA 56 E6433 Datasheet

SMBTA 56 E6433

Datasheet specifications

Datasheet's name SMBTA 56 E6433
File size 67.435 KB
File type pdf
Number of pages 7

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Infineon Technologies SMBTA 56 E6433
  • Transistor Type: PNP
  • Collector Current (Ic): 500mA
  • Power Dissipation (Pd): 330mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 100@100mA,1V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,100mA
  • Package: SOT-23
  • Manufacturer: Infineon Technologies