NZT45H8 Datasheet

NZT45H8

Datasheet specifications

Datasheet's name NZT45H8
File size 70.016 KB
File type pdf
Number of pages 9

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi NZT45H8
  • Transistor Type: PNP
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 8A
  • Power Dissipation (Pd): 1.5W
  • Transition Frequency (fT): 40MHz
  • DC Current Gain (hFE@Ic,Vce): 40@4A,1V
  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@8A,400mA
  • Package: SOT-223
  • Manufacturer: onsemi

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