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NZT45H8 Datasheet
Datasheet specifications
| Datasheet's name | NZT45H8 |
|---|---|
| File size | 70.016 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet NZT45H8 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi NZT45H8
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 1.5W
- Transition Frequency (fT): 40MHz
- DC Current Gain (hFE@Ic,Vce): 40@4A,1V
- Collector Cut-Off Current (Icbo): 10uA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@8A,400mA
- Package: SOT-223
- Manufacturer: onsemi
