IPC100N04S5-1R2 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPC100N04S5-1R2
- Power Dissipation (Pd): 150W
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 3.4V@90uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4mΩ@7V,50A
- Package: TDSON-8-EP(6x5)
- Manufacturer: Infineon Technologies
