BC847BPDW1T3G دیتاشیت

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مشاهده دیتاشیت BC847BPDW1T3G	دانلود دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi BC847BPDW1T3G
Transistor Type: 1PCSNPN&1PCSPNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 100mA
Power Dissipation (Pd): 380mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 200@2mA,5V
Collector Cut-Off Current (Icbo): 15nA
Collector-Emitter Breakdown Voltage (Vceo): 45V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@100mA,5mA;650mV@100mA,5mA
Package: SOT-363-6(SC-70-6)
Manufacturer: onsemi