SIR626DP-T1-RE3 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SIR626DP-T1-RE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 104W
- Total Gate Charge (Qg@Vgs): 78nC@7.5V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 5130pF@30V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 3.4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.7mΩ@10V,20A
- Package: PowerPAK-SO-8
- Manufacturer: Vishay Intertech