دیتاشیت SUD19P06-60-GE3
مشخصات دیتاشیت
| نام دیتاشیت | SUD19P06-60-GE3 |
|---|---|
| حجم فایل | 79.049 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
دانلود دیتاشیت SUD19P06-60-GE3 |
SUD19P06-60-GE3 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SUD19P06-60-GE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.3W;38.5W
- Total Gate Charge (Qg@Vgs): 40nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 1710pF@25V
- Continuous Drain Current (Id): 18.3A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,10A
- Package: TO-252-2(DPAK)
- Manufacturer: Vishay Intertech
