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FHT9015G-ME Datasheet
Datasheet specifications
| Datasheet's name | FHT9015G-ME |
|---|---|
| File size | 50.806 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet FHT9015G-ME |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: FH (Guangdong Fenghua Advanced Tech) FHT9015G-ME
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 200MHz
- DC Current Gain (hFE@Ic,Vce): 200@1mA,5V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@100mA,10mA
- Package: SOT-23
- Manufacturer: FH (Guangdong Fenghua Advanced Tech)