PBHV8515QAZ دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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PBHV8515QAZ
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حجم فایل
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60.14
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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17
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Nexperia PBHV8515QAZ
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
500mA
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Power Dissipation (Pd):
325mW
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Transition Frequency (fT):
75MHz
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DC Current Gain (hFE@Ic,Vce):
100@200mA,10V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
150V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
60mV@200mA,40mA
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Package:
SOT-1215
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Manufacturer:
Nexperia
