دیتاشیت PBHV8515QAZ
مشخصات دیتاشیت
| نام دیتاشیت |
PBHV8515QAZ
|
| حجم فایل |
60.14
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
17
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Nexperia PBHV8515QAZ
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
500mA
-
Power Dissipation (Pd):
325mW
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Transition Frequency (fT):
75MHz
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DC Current Gain (hFE@Ic,Vce):
100@200mA,10V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
150V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
60mV@200mA,40mA
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Package:
SOT-1215
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Manufacturer:
Nexperia
