FQD12N20LTM-F085P 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQD12N20LTM-F085P
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.5W;55W
- Total Gate Charge (Qg@Vgs): 21nC@5V
- Drain Source Voltage (Vdss): 200V
- Input Capacitance (Ciss@Vds): 1080pF@25V
- Continuous Drain Current (Id): 9A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 280mΩ@4.5A,10V
- Package: TO-252
- Manufacturer: onsemi
