FQD12N20LTM-F085P 数据手册

FQD12N20LTM-F085P

数据手册规格

数据手册名称 FQD12N20LTM-F085P
文件大小 70.016 千字节
文件类型 pdf
页数 10

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技术规格

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQD12N20LTM-F085P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;55W
  • Total Gate Charge (Qg@Vgs): 21nC@5V
  • Drain Source Voltage (Vdss): 200V
  • Input Capacitance (Ciss@Vds): 1080pF@25V
  • Continuous Drain Current (Id): 9A
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 280mΩ@4.5A,10V
  • Package: TO-252
  • Manufacturer: onsemi

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