BCW 60D E6327 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies BCW 60D E6327
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 330mW
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE@Ic,Vce): 380@2mA,5V
- Collector Cut-Off Current (Icbo): 20nA
- Collector-Emitter Breakdown Voltage (Vceo): 32V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,1.25mA
- Package: SOT-23
- Manufacturer: Infineon Technologies
