BCR 108 E6433 Datasheet

BCR 108 E6433

Datasheet specifications

Datasheet's name BCR 108 E6433
File size 50.227 KB
File type pdf
Number of pages 11

Download Datasheet BCR 108 E6433

Download Datasheet

Other documentations

No other documentation was found!

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Digital Transistors
  • Datasheet: Infineon Technologies BCR 108 E6433
  • Input Resistor: 2.2kΩ
  • Resistor Ratio: 0.047
  • Transistor Type: 1 NPN - Pre Biased
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 200mW
  • Transition Frequency (fT): 170MHz
  • DC Current Gain (hFE@Ic,Vce): -
  • Input Voltage (VI(on)@Ic,Vce): 500mV@2mA,300mV
  • Output Voltage (VO(on)@Io/Ii): -
  • Input Voltage (VI(off)@Ic,Vce): 800mV@100uA,5V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,500uA
  • Package: SOT-23
  • Manufacturer: Infineon Technologies

Similar products