دیتاشیت SVF18N50PN
مشخصات دیتاشیت
| نام دیتاشیت |
SVF18N50PN
|
| حجم فایل |
60.812
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Hangzhou Silan Microelectronics SVF18N50PN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
240W
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Total Gate Charge (Qg@Vgs):
37.9nC@10V
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Drain Source Voltage (Vdss):
500V
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Input Capacitance (Ciss@Vds):
2.32nF@25V
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Continuous Drain Current (Id):
18A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
7.15pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
260mΩ@10V,9A
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Package:
TO-3P
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Manufacturer:
Hangzhou Silan Microelectronics
