دیتاشیت PB210BD-VB
مشخصات دیتاشیت
| نام دیتاشیت |
PB210BD-VB
|
| حجم فایل |
66.018
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
VBsemi Elec PB210BD-VB
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
96W
-
Total Gate Charge (Qg@Vgs):
24nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
950pF@25V
-
Continuous Drain Current (Id):
15A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
114mΩ@10V,3A
-
Package:
TO-252
-
Manufacturer:
VBsemi Elec
