YJG100N04A دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
YJG100N04A
|
|
حجم فایل
|
79.322
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Yangzhou Yangjie Elec Tech YJG100N04A
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
83W
-
Total Gate Charge (Qg@Vgs):
49nC@10V
-
Drain Source Voltage (Vdss):
40V
-
Input Capacitance (Ciss@Vds):
4.645nF@20V
-
Continuous Drain Current (Id):
100A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
360pF@20V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.8mΩ@10V,20A
-
Package:
DFN-8(5.2x5.9)
-
Manufacturer:
Yangzhou Yangjie Elec Tech
