دیتاشیت HYG028N10NS1B6
مشخصات دیتاشیت
نام دیتاشیت |
HYG028N10NS1B6
|
حجم فایل |
63.166
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
9
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
HUAYI HYG028N10NS1B6
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
300W
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Total Gate Charge (Qg@Vgs):
176nC@10V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
10.32nF@25V
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Continuous Drain Current (Id):
230A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
242pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
2.4mΩ@10V,50A
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Package:
TO-263-6
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Manufacturer:
HUAYI