دیتاشیت HYG028N10NS1B6
مشخصات دیتاشیت
| نام دیتاشیت |
HYG028N10NS1B6
|
| حجم فایل |
63.166
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
HUAYI HYG028N10NS1B6
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
300W
-
Total Gate Charge (Qg@Vgs):
176nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
10.32nF@25V
-
Continuous Drain Current (Id):
230A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
242pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.4mΩ@10V,50A
-
Package:
TO-263-6
-
Manufacturer:
HUAYI
