BCP55-16F Datasheet

BCX55,135

Datasheet specifications

Datasheet's name BCX55,135
File size 59.823 KB
File type pdf
Number of pages 22

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Nexperia BCP55-16F
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 1A
  • Power Dissipation (Pd): 650mW
  • Transition Frequency (fT): 180MHz
  • DC Current Gain (hFE@Ic,Vce): 100@150mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
  • Package: SOT-223-4
  • Manufacturer: Nexperia

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