SMBTA 56 E6327 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies SMBTA 56 E6327
- Transistor Type: PNP
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 330mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 100@100mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,100mA
- Package: SOT-23
- Manufacturer: Infineon Technologies
