NVMFWS016N06CT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NVMFWS016N06CT1G
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حجم فایل
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91.175
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NVMFWS016N06CT1G
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
3.4W;36W
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Total Gate Charge (Qg@Vgs):
6.9nC@10V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
489pF@30V
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Continuous Drain Current (Id):
10A;33A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@25uA
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Reverse Transfer Capacitance (Crss@Vds):
5.7pF@30V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
13mΩ@10V,5A
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Package:
SO-8FL
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Manufacturer:
onsemi
