دیتاشیت SI1016X-T1-GE3
مشخصات دیتاشیت
| نام دیتاشیت |
SI1016X-T1-GE3
|
| حجم فایل |
82.011
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
-
Type:
1PCSN-Channel&1PCSP-Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Vishay Intertech SI1016X-T1-GE3
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
250mW
-
Total Gate Charge (Qg@Vgs):
0.75nC@4.5V
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
485mA;370mA
-
Gate Threshold Voltage (Vgs(th)@Id):
1V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
700mΩ@600mA,4.5V
-
Package:
SOT-563
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Manufacturer:
Vishay Intertech
