FHT5551-ME 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: FH (Guangdong Fenghua Advanced Tech) FHT5551-ME
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 150mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 80@10mA,5V
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@10mA,1mA
- Package: SOT-23
- Manufacturer: FH (Guangdong Fenghua Advanced Tech)