دیتاشیت FHT5551-ME
مشخصات دیتاشیت
| نام دیتاشیت |
FHT5551-ME
|
| حجم فایل |
50.613
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
FH (Guangdong Fenghua Advanced Tech) FHT5551-ME
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Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
600mA
-
Power Dissipation (Pd):
150mW
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
80@10mA,5V
-
Collector Cut-Off Current (Icbo):
50nA
-
Collector-Emitter Breakdown Voltage (Vceo):
160V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
150mV@10mA,1mA
-
Package:
SOT-23
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Manufacturer:
FH (Guangdong Fenghua Advanced Tech)
