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2N5551-TA Datasheet
Datasheet specifications
| Datasheet's name | 2N5551 |
|---|---|
| File size | 58.129 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet 2N5551 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. 2N5551-TA
- Transistor Type: NPN
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 625mW
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Package: TO-92
- Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.
