2N5551-TA Datasheet

2N5551

Datasheet specifications

Datasheet's name 2N5551
File size 58.129 KB
File type pdf
Number of pages 5

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. 2N5551-TA
  • Transistor Type: NPN
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 625mW
  • Collector-Emitter Breakdown Voltage (Vceo): 160V
  • Package: TO-92
  • Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.

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