دیتاشیت BSF134N10NJ3 G
مشخصات دیتاشیت
نام دیتاشیت |
BSF134N10NJ3 G
|
حجم فایل |
31.205
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
13
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies BSF134N10NJ3 G
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Operating Temperature:
-40°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.2W;43W
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Total Gate Charge (Qg@Vgs):
30nC@10V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
2300pF@50V
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Continuous Drain Current (Id):
9A;40A
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Gate Threshold Voltage (Vgs(th)@Id):
3.5V@40uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
13.4mΩ@30A,10V
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Package:
MG-DSON-2(3.8x4.8)mm
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Manufacturer:
Infineon Technologies