BSF134N10NJ3 G 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies BSF134N10NJ3 G
- Operating Temperature: -40°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.2W;43W
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 2300pF@50V
- Continuous Drain Current (Id): 9A;40A
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@40uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 13.4mΩ@30A,10V
- Package: MG-DSON-2(3.8x4.8)mm
- Manufacturer: Infineon Technologies
