1N65G 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: UMW(Youtai Semiconductor Co., Ltd.) 1N65G
- Power Dissipation (Pd): -
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 1A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11Ω@10V,500mA
- Package: SOT-223-4
- Manufacturer: UMW(Youtai Semiconductor Co., Ltd.)
