FCX458TA 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Diodes Incorporated FCX458TA
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 225mA
- Power Dissipation (Pd): 1W
- Transition Frequency (fT): 50MHz
- DC Current Gain (hFE@Ic,Vce): 100@50mA,10V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@50mA,6mA
- Package: SOT-89
- Manufacturer: Diodes Incorporated