دیتاشیت IRFB4227PBF
مشخصات دیتاشیت
نام دیتاشیت |
IRFB4227PBF
|
حجم فایل |
108.586
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies IRFB4227PBF
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Operating Temperature:
-40°C~+175°C@(Tj)
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Power Dissipation (Pd):
330W
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Total Gate Charge (Qg@Vgs):
98nC@10V
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Drain Source Voltage (Vdss):
200V
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Input Capacitance (Ciss@Vds):
4600pF@25V
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Continuous Drain Current (Id):
65A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
24mΩ@10V,46A
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Package:
TO-220
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Manufacturer:
Infineon Technologies