دیتاشیت RFD14N05LSM-VB
مشخصات دیتاشیت
| نام دیتاشیت |
RFD14N05LSM-VB
|
| حجم فایل |
67.761
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec RFD14N05LSM-VB
-
Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
41.7W
-
Total Gate Charge (Qg@Vgs):
19.8nC@10V
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Drain Source Voltage (Vdss):
60V
-
Input Capacitance (Ciss@Vds):
860pF@30V
-
Continuous Drain Current (Id):
16.9A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
40pF@30V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
73mΩ@10V,6.6A
-
Package:
TO-252
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Manufacturer:
VBsemi Elec
