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G28N03D3 Datasheet
Datasheet specifications
| Datasheet's name | G28N03D3 |
|---|---|
| File size | 82.688 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet G28N03D3 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: GOFORD G28N03D3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 20.5W
- Total Gate Charge (Qg@Vgs): 15nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 891pF@15V
- Continuous Drain Current (Id): 28A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 144pF@15V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6.5mΩ
- Package: DFN-8(3x3)
- Manufacturer: GOFORD