NTD25P03LG-VB دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NTD25P03LG-VB
|
|
حجم فایل
|
72.389
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
9
|
مشخصات فنی
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
VBsemi Elec NTD25P03LG-VB
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
25W
-
Total Gate Charge (Qg@Vgs):
19nC@4.5V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
1.35nF@15V
-
Continuous Drain Current (Id):
26A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
190pF@15V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
33mΩ@10V,10A
-
Package:
TO-252
-
Manufacturer:
VBsemi Elec