PDTC124ET,215 Datasheet

PDTC124ET,235

Datasheet specifications

Datasheet's name PDTC124ET,235
File size 51.873 KB
File type pdf
Number of pages 18

Download Datasheet PDTC124ET,235

Download Datasheet

Other documentations

No other documentation was found!

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Digital Transistors
  • Datasheet: Nexperia PDTC124ET,215
  • Transistor Type: 1 NPN - Pre Biased
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 250mW
  • DC Current Gain (hFE@Ic,Vce): 60@5mA,5V
  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@500uA,10mA
  • Package: TO-236AB
  • Manufacturer: Nexperia