دیتاشیت MMBT4401LT1G
مشخصات دیتاشیت
| نام دیتاشیت |
MMBT4401LT1G
|
| حجم فایل |
83.51
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi MMBT4401LT1G
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
600mA
-
Power Dissipation (Pd):
300mW
-
Transition Frequency (fT):
250MHz
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DC Current Gain (hFE@Ic,Vce):
100@150mA,1V
-
Collector Cut-Off Current (Icbo):
-
-
Collector-Emitter Breakdown Voltage (Vceo):
40V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
750mV@500mA,50mA
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Package:
SOT-23(TO-236)
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Manufacturer:
onsemi
