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IMX1T110 Datasheet
Datasheet specifications
| Datasheet's name | IMX1T110 |
|---|---|
| File size | 66.852 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet IMX1T110 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: ROHM Semicon IMX1T110
- Transistor Type: 2 NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 150mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 180MHz
- DC Current Gain (hFE@Ic,Vce): 120@1mA,6V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,5mA
- Package: SOT-457
- Manufacturer: ROHM Semicon