دیتاشیت SIHP12N60E-GE3
مشخصات دیتاشیت
| نام دیتاشیت |
SIHP12N60E-GE3
|
| حجم فایل |
90.004
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Vishay Intertech SIHP12N60E-GE3
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
147W
-
Total Gate Charge (Qg@Vgs):
58nC@10V
-
Drain Source Voltage (Vdss):
600V
-
Input Capacitance (Ciss@Vds):
937pF@100V
-
Continuous Drain Current (Id):
12A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
380mΩ@10V,6A
-
Package:
TO-220AB-3
-
Manufacturer:
Vishay Intertech
