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SUD50N06-09L-E3 Datasheet
Datasheet specifications
| Datasheet's name | SUD50N06-09L-E3 |
|---|---|
| File size | 74.553 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet SUD50N06-09L-E3 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SUD50N06-09L-E3
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 3W;136W
- Total Gate Charge (Qg@Vgs): 70nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 2650pF@25V
- Continuous Drain Current (Id): 50A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 9.3mΩ@10V,20A
- Package: TO-252
- Manufacturer: Vishay Intertech
