دیتاشیت 4435
مشخصات دیتاشیت
| نام دیتاشیت |
4435
|
| حجم فایل |
75.62
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
GOFORD 4435
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
3.1W
-
Total Gate Charge (Qg@Vgs):
30nC@10V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
1.6nF@15V
-
Continuous Drain Current (Id):
10A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.6V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
300pF@15V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
16mΩ@10V,10A
-
Package:
SOP-8
-
Manufacturer:
GOFORD
