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4435 Datasheet
Datasheet specifications
| Datasheet's name | 4435 |
|---|---|
| File size | 75.62 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet 4435 |
Download Datasheet |
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Technical specifications
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: GOFORD 4435
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 3.1W
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 1.6nF@15V
- Continuous Drain Current (Id): 10A
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 300pF@15V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@10V,10A
- Package: SOP-8
- Manufacturer: GOFORD