PBSS4350X,135 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Nexperia PBSS4350X,135
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 3A
- Power Dissipation (Pd): 1.6W
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 300@1A,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 370mV@3A,300mA
- Package: SOT-89-4
- Manufacturer: Nexperia
