دیتاشیت MJE13001G-C-AB3-F-R

MJE13001G-C-AB3-F-R

مشخصات دیتاشیت

نام دیتاشیت MJE13001G-C-AB3-F-R
حجم فایل 62.342 کیلوبایت
نوع فایل pdf
تعداد صفحات 3

دانلود دیتاشیت MJE13001G-C-AB3-F-R

MJE13001G-C-AB3-F-R Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: UTC(Unisonic Tech) MJE13001G-C-AB3-F-R
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 200mA
  • Power Dissipation (Pd): 550mW
  • Transition Frequency (fT): 8MHz
  • DC Current Gain (hFE@Ic,Vce): 20@20mA,20V
  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@50mA,10mA
  • Package: SOT-89-3
  • Manufacturer: UTC(Unisonic Tech)