MMBT2222A-G Datasheet

MMBT2222A-G

Datasheet specifications

Datasheet's name MMBT2222A-G
File size 92.12 KB
File type pdf
Number of pages 4

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. MMBT2222A-G
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 300mW
  • Transition Frequency (fT): 300MHz
  • Collector Cut-Off Current (Icbo): 10nA
  • Collector-Emitter Breakdown Voltage (Vceo): 40V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@500mA,50mA
  • Package: SOT-23
  • Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.

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